Reconstruction dependence of the etching and passivation of the GaAs(001) surface |
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Authors: | O E Tereshchenko S V Eremeev A V Bakulin and S E Kulkova |
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Institution: | 1.Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia;2.Novosibirsk State University,Novosibirsk,Russia;3.Institute of Strength Physics and Materials Science, Siberian Branch,Russian Academy of Sciences,Tomsk,Russia;4.Tomsk State University,Tomsk,Russia |
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Abstract: | The microscopic nature of the selective interaction of iodine with an As- and Ga-stabilized GaAs(001) surface has been investigated
by the photoelectron emission and ab initio calculations. The adsorption of iodine on the Ga-stabilized (4 × 2)/c(8 × 2) surface leads to the formation of the prevailing chemical bond with gallium atoms; to a significant redistribution
of the electron density between the surface Ga and As atoms; and, as a result, to a decrease in their binding energy. Iodine
on the As-stabilized (2 × 4)/c(2 × 8) surface forms a bond predominantly with surface arsenic atoms. Such a selective interaction of iodine with the reconstructed
surfaces gives rise to the etching of the Ga-stabilized surface and the passivation of the As-stabilized surface; this explains
the layer-by-layer (“digital”) etching of GaAs(001) controlled by the reconstruction transitions on this surface. |
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