Monte Carlo simulation studies of sidewall roughening during reactive ion etching |
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Authors: | SK Pani F Tjiptoharsono CC Wong CS Premachandran PV Ramama MK Iyer |
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Institution: | (1) School of Materials Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798, Singapore;(2) Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore, 117685, Singapore |
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Abstract: | The evolution of sidewall roughness (SWR) during reactive ion etching (RIE) was simulated using a Monte Carlo method. It was
discovered that the sidewall roughness established during an earlier etch period represents a historical archive of the moment
during which the etch front passes by and is not affected by further etching. We also found that the behavior of SWR follows
two distinct trends. At the initial stages, SWR increases with etch time, or its equivalent, the etch depth, but, beyond a
certain etch depth, SWR of etched surfaces stabilizes and does not change with further etching. This is related to the change
of the number of shadowing and reemitted particles as the etch depth increases. When the shadowing sticking coefficient decreases
significantly, SWR increases beyond a certain critical depth due to reemission. Additionally, the noise also increases as
the sticking coefficient decreases because of an increased number of reemitted particles. The simulated results support very
well the assertions and mechanisms of the experimental findings and an etch model based on shadowing and first-order reemission
effects at low RIE pressure.
PACS 52.65.Pp; 52.77.Bn; 81.65.Cf |
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