| InxGa1－xAs缓冲层上InyGa1－yAs/(Al)Ga |
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| 引用本文： | 王小军,黄美纯.InxGa1－xAs缓冲层上InyGa1－yAs/(Al)Ga[J].光子学报,1996,25(12):1089-1094. |
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| 作者姓名： | 王小军 黄美纯 |
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| 作者单位： | [1]国家光电子工艺中心 [2]厦门大学物理系 |
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| 摘 要： | 本文中,发现在InxGa1-xAs缓冲层上非故意掺杂的InyGa1-yAs/(Al)GaAs超晶格样品中存在着两个互相反向的自建电场区,一个位于样品表面,另一个位于InxGa1-xAs缓冲层和超晶格界面。据此,合理地解释了样品的光伏测试结果,并对此类样品的MOCVD生长工艺给予指导。
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| 关 键 词： | 光伏测量 MOCVD InGaAs应变量子阱 |
| 收稿时间： | 1995-12-11 |
THE PHOTOVOLTAIC MEASUREMENTS OF InyGa1-yAs/GaAs SUPEKLATTICES ON InxGa1-xAs BUFFER LAYER |
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| Wang Xiaojun,Liu Wei,Hu Xiongwei,Wang Qiming,Huang Meichun.THE PHOTOVOLTAIC MEASUREMENTS OF InyGa1-yAs/GaAs SUPEKLATTICES ON InxGa1-xAs BUFFER LAYER[J].Acta Photonica Sinica,1996,25(12):1089-1094. |
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| Authors: | Wang Xiaojun Liu Wei Hu Xiongwei Wang Qiming Huang Meichun |
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| Institution: | 1. National Research Center for Optoelectronic Technology, Institute of Semiconductor, CAS, Beijng 100083;2. Physics Department, Xiamen University, Xiame, 136l005 |
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| Abstract: | It is found that there are two intrinsic electric field regions in samples of InyGa1-yAs/GaAssuperlattices on InxGa1-xAs buffer layer.The electric field in these two regions, with one locating atthe surface and another locating at the interface between the InyGa1-yAs/GaAs superlattices and the InxGa1-x As buffer layer,has contrary direction each other. Based on this model,we can give a goodexplanation to the photovoltaic spectra of these samples. |
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| Keywords: | Photovoltaic measurement MOCVD InGaAs/GaAs strained quantum well |
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