Ultrafast carrier dynamics in strained In1−xGaxAs/InP heterostructures |
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| Authors: | R. Kersting A. Kohl T. Voss K. Leo H. Kurz |
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| Affiliation: | (1) Institut für Halbleitertechnik, RWTH Aachen, Sommerfeldstr. 24, W-5100 Aachen, Germany |
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| Abstract: | The transfer of electrons and holes from barriers to wells is investigated in strained In1-xGaxAs/InP multiple quantum wells by time-resolved luminescence upconversion with 300 fs time resolution. The transfer times are in the range of a few ps and independent of the Ga content. The investigation of Ga-rich structures allows to observe directly the hole transfer. |
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| Keywords: | 73.40.– c 73.50.Gr 78.47.+p |
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