InGaN/GaN多量子阱热退火的拉曼光谱和荧光光谱

通过拉曼光谱及荧光光谱测量研究了采用低压金属有机化学沉积(MOCVD)方法生长的InGaN／GaN多量子阱高温快速热退火处理对量子阱光学性质的影响。观测到退火后InGaN／GaN量子阱的拉曼光谱E2，A1(LO)模式的峰位置出现了红移，而且该振动峰的半高宽也有微小变化。温度升高退火效果更明显。退火使量子阱内应力部分消除，同时In，Ga原子扩散出现相分离使拉曼谱表现出变化。在常温和低温下的光荧光谱表明，退火处理的量子阱发光主峰都出现了红移；而且低温退火出现红移，退火温度升高相对低温退火出现蓝移；同时在低温荧光光谱里看到经过退火处理后原发光峰中主峰旁边弱的峰消失了。讨论了退火对多量子阱光学性质的影响。

Raman Spectra and Photoluminescence Spectra of InGaN/GaN Multiquantum Wells Annealed

InGaN/GaN multiquantum well, grown by MOCVD on a sapphire substrate and annealed under the conditions of 700 and 900 degrees C x (20 min)(-1), was studied by means of mirco-Raman spectroscopy and photoluminescence. The Raman peak of E2, A1 showed red shift after multiquantum were wells annealed, and the HWHM of Raman peakdecreased imperceptibly. Moreover,the photoluminescence peak of the sample annealed under the condition of 700 degrees x (20 min)(-1) showed a red shift, then appeared a blue shift under the condition of 900 degrees C x (20 min)(-1). These results clearly showed that the sample annealed induced strain stress relief that could explain Raman peak shift, but the piezoelectric field induced the quantum-confined Stark effect, which can't agree with the photoluminescence experiment. Sample annealed could change the width of quantum well and InGa phase segregated; these factors influencing structure of quantum well could explain the results of photoluminescence spectra.