Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan
Abstract:
The formation mechanism of InxGa1?xAs (x=0.06) bridge layers on patterned GaAs (1 1 1)B substrates using liquid-phase epitaxy has been investigated. For this (i) the effect of density gradient in the solution on the formation of bridge layer and (ii) growth of bridge layer on 1 1 0 line-seed-substrates were studied. The convection induced by destabilizing density gradient in the solution led to an increase of lateral growth rate of the InGaAs bridge layers on a substrate mounted on the upper portion of the solution. However, it did not have any significant effect on the formation of the bridge layers. The formation of bridge layer on 1 1 0 line-seed-substrate took place only for the {1 1 1}B growth fronts, which indicated that “Berg effect” is responsible for the formation of bridge layers.