Passivation of high-resistivity cadmium telluride by hydrogen implantation

Cadmium telluride crystals grown by the Travelling Heater Method (THM) technique have been implanted with hydrogen using protons from 2 keV to 3 MeV.Electrical measurements indicate drastic changes in the concentration of defects, especially in the 0.15–0.20 and 0.45–0.60 eV bands. However, the modification induced by hydrogen depends on the starting material, implantation and annealing conditions.Furthermore, resistivity and carrier lifetime are also strongly affected by this treatment.