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Electrical characteristics of AIInN/GaN HEMTs under cryogenic operation |
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| Institution: | [1]School of Electronics and Information, Nantong University, Nantong 226019, China [2]Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA 16802, USA |
| Abstract: | |
| Keywords: | AIInN/GaN heterostructure high-electron mobility transistor （HEMT） cryogenic temperature two-dimensional electron gas （2DEG） mobility |
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