An additional moving domain induced by a high absorption domain under the action of collimated light beams

The possibility of formation of a basic (stationary) and an additional (moving) high-absorption domain in an optically bistable system, based on high absorption, is demonstrated. A semiconductor with the absorption coefficient dependent on the concentration of free charge carriers in the conduction band is considered as a nonlinear medium. Under certain conditions, an optical beam passing through the stationary high-absorption domain acquires an annular profile and, after traveling a certain distance, transforms into a Gaussian beam with an intensity on the axis sufficient to switch the medium-beam system to the upper state. This moving domain periodically disappears and reappears due to diffusion processes.