Structure Modification Function of g‐C3N4 for Al2O3 in the In Situ Hydrothermal Process for Enhanced Photocatalytic Activity

Heterojunctions of g‐C₃N₄/Al₂O₃ (g‐C₃N₄=graphitic carbon nitride) are constructed by an in situ one‐pot hydrothermal route based on the development of photoactive γ‐Al₂O₃ semiconductor with a mesoporous structure and a high surface area (188 m²g^?1) acting as electron acceptor. A structure modification function of g‐C₃N₄ for Al₂O₃ in the hydrothermal process is found, which can be attributed to the coordination between unoccupied orbitals of the Al ions and lone‐pair electrons of the N atoms. The as‐synthesized heterojunctions exhibit much higher photocatalytic activity than pure g‐C₃N₄. The hydrogen generation rate and the reaction rate constant for the degradation of methyl orange over 50 % g‐C₃N₄/Al₂O₃ under visible‐light irradiation (λ>420 nm) are 2.5 and 7.3 times, respectively, higher than those over pristine g‐C₃N₄. The enhanced activity of the heterojunctions is attributed to their large specific surface areas, their close contact, and the high interfacial areas between the components as well as their excellent adsorption performance, and efficient charge transfer ability.