Impact of strain relaxation of AlmGa1−mN layer on 2-DEG sheet charge density and current voltage characteristics of lattice mismatched AlmGa1−mN/GaN HEMTs |
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Authors: | RashmiA. Kranti S. HaldarR.S. Gupta |
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Affiliation: | a Semiconductor Devices Research Laboratory, Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110 021, India b Department of Physics, Motilal Nehru College, University of Delhi South Campus, New Delhi 110 021, India |
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Abstract: | An accurate charge control model to investigate the effect of aluminum composition, strain relaxation, thickness and doping of the AlmGa1−mN barrier layer on the piezoelectric and spontaneous polarization induced 2-DEG sheet charge density, threshold voltage and output characteristics of partially relaxed AlmGa1−mN/GaN HEMTs is proposed. The strain relaxation of the barrier imposes an upper limit on the maximum 2-DEG density achievable in high Al content structures and is critical in determining the performance of lattice mismatched AlmGa1−mN/GaN HEMTs. The model incorporates the effects of field dependent mobility, parasitic source/drain resistance and velocity saturation to evaluate the output characteristics of AlmGa1−mN/GaN HEMTs. Close proximity with published results confirms the validity of the proposed model. |
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Keywords: | AlmGa1&minus mN/GaN HEMTs Aluminum composition Strain relaxation Piezoelectric and spontaneous polarization 2-DEG sheet charge density Current-voltage characteristics Output conductance |
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