Au层退火温度对ZnO/Au/ZnO多层膜的结构、光学及电学性质的影响

采用金属有机化学气相沉积(MOCVD)技术在蓝宝石衬底上制备出晶体质量较好的透明导电的ZnO/Au/ZnO(ZAZ)多层膜,其中,Au夹层是通过射频磁控溅射的方法获得。通过对Au夹层进行不同温度的退火处理,研究了Au层退火温度对ZAZ多层膜的结构特性、电学性能和光学特性的影响。利用原子力显微镜(AFM)、扫描电子显微镜(SEM)、X射线衍射(XRD)仪、霍尔效应测试和透射谱分析等测试手段对ZAZ多层膜的性质进行了分析。测试结果表明,在200 ℃下对Au夹层进行快速退火处理,多层膜的结构、电学和光学性质达到最优,表面等离子体效应也更明显。其中,XRD(002)衍射峰的半高宽为0.14°,电阻率为2.7×10^-3 Ω·cm,载流子浓度为1.07×10²⁰ cm^-3,可见光区平均透过率为75.3%。

Effect of Au Interlayer Annealing Temperature on Structural, Electrical and Optical Properties of ZnO/Au/ZnO Films

The transparent and conductive ZnO/Au/ZnO(ZAZ) multilayer films were deposited on the sapphire substrates by MOCVD and RF magnetron sputtering.All the ZnO films were fabricated by MOCVD,and the thickness of each ZnO film was approximately 150 nm.The Au interlayers were fabricated by RF magnetron sputtering,annealed at room temperature,200 and 300 ℃.The thickness of each Au interlayer was 2 nm.The effects of the annealing temperature on structural,electrical and optical properties of ZAZ films were investigated.When the annealing temperature was 200 ℃,the FWHM of ZAZ films were 0.14°,which exhibited the better crystal quality and c-axis pre-ferential orientation.Moreover,the lowest resistivity was 2.7×10-3 Ω·cm with a carrier concentration of 1.07×1020 cm-3 and the visible transmittance was 75.3%.This indicated the multilayer films had the best properties when the annealing temperature was 200 ℃.