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双空穴注入的绿色磷光有机电致发光器件
引用本文:张静,张方辉. 双空穴注入的绿色磷光有机电致发光器件[J]. 发光学报, 2012, 33(10): 1107-1111
作者姓名:张静  张方辉
作者单位:陕西科技大学电气与信息工程学院
基金项目:国家自然科学基金(61076066);陕西科技大学博士基金(BJ09-07);陕西科技大学自然科学基金(ZX09-31);陕西省科技统筹创新工程计划(2011KTCQ01-09)资助项目
摘    要:制作了一种新型绿色磷光有机电致发光二极管。器件结构为ITO/HAT-CN(x nm)/MoO3(30 nm)/NPB(40 nm)/TCTA(10 nm)/CPB∶GIr1(30 nm,14%)/BCP(10 nm)/Alq3(25 nm)/LiF(1 nm)/Al(100 nm),其中X=0,8,10,12,14,15 nm。电流密度-电压-亮度特性表明该结构有利于降低驱动电压和增加器件亮度。当HAT-CN厚度为12 nm时,器件的最高亮度可以达到32 480 cd/m2,起亮电压为3.5 V左右,发光效率为24.2cd/A。所设计的空穴型器件证明该器件结构具有很好的空穴注入和传输特性。

关 键 词:OLED  双空穴注入层  绿色磷光
收稿时间:2012-06-29

A Green Phosphorescent Organic Lighting Emitting Device with Double Hole Injection Layers
ZHANG Jing,ZHANG Fang-hui. A Green Phosphorescent Organic Lighting Emitting Device with Double Hole Injection Layers[J]. Chinese Journal of Luminescence, 2012, 33(10): 1107-1111
Authors:ZHANG Jing  ZHANG Fang-hui
Affiliation:(School of Electric and Information Engineering,Shaanxi University of Science and Technology,Xi’an 710021,China)
Abstract:A novel structure of green phosphorescent organic light-emitting diode was fabricated.The structure of the devices was ITO/HAT-CN(x nm)/MoO3(30 nm)/NPB(40 nm)/TCTA(10 nm)/CPB∶GIr1(30 nm,14%)/BCP(10 nm)/Alq3(25 nm)/LiF(1 nm)/Al(100 nm),in which X was 0,8,10,12,14,15 nm,respectively.The current density-voltage-luminance(J-V-L) performance shows that this structure is beneficial to the reduction of the driving voltage and the enhancement of the luminance.It was found that the best thickness was 12 nm HAT-CN layer,the highest luminance of the device was 32 480 cd/m2 at 15 V,the turn-on voltage of this device was 3.5 V and the current efficiency was 24.2 cd/A.Hole-only device was fabricated to verify the enhancement of hole injection and transport properties of this structure.
Keywords:organic light emitting diodes  double hole injection layers  green phosphorescence
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