首页 | 本学科首页   官方微博 | 高级检索  
     

光泵浦双反射带半导体激光器的热效应有限元分析
引用本文:王菲,王晓华,王金艳,房丹,魏志鹏,方铉. 光泵浦双反射带半导体激光器的热效应有限元分析[J]. 发光学报, 2012, 33(3): 309-313. DOI: 10.3788/fgxb20123303.0309
作者姓名:王菲  王晓华  王金艳  房丹  魏志鹏  方铉
作者单位:1. 长春理工大学 光电工程学院, 吉林 长春 130022;2. 长春理工大学 理学院, 吉林 长春 130022;3. 长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春 130022
基金项目:国家自然科学基金(61076039);教育部博士点专项基金(20102216110001);吉林省自然科学基金(20090555);长春理工大学科技创新基金(XJJLG201003)资助项目
摘    要:给出了808 nm/980 nm双反射带布拉格反射镜的反射谱线,建立了光泵浦双反射带半导体激光器件的热学模型及其内部热载荷分布形式,运用有限元分析方法,详细分析了双反射带光泵浦半导体激光器件的热学特性。结果表明,对于激射光反射率为99.96%的单反射带和双反射带布拉格反射镜结构的垂直外腔面发射半导体激光器件,前者的散热性能较好,而后者的最大温升明显低于前者。本文的分析结果可为半导体激光器件的结构优化和实验研究提供理论参考。

关 键 词:光泵浦半导体激光器  有限元法  双反射带布拉格反射镜  热效应
收稿时间:2011-11-14

Analysis on Thermal Effect of Optically Pumped Semiconductor Lasers with DBM by Finite Element Method
WANG Fei,WANG Xiao-hua,WANG Jin-yan,FANG Dan,WEI Zhi-peng,FANG Xuan. Analysis on Thermal Effect of Optically Pumped Semiconductor Lasers with DBM by Finite Element Method[J]. Chinese Journal of Luminescence, 2012, 33(3): 309-313. DOI: 10.3788/fgxb20123303.0309
Authors:WANG Fei  WANG Xiao-hua  WANG Jin-yan  FANG Dan  WEI Zhi-peng  FANG Xuan
Affiliation:1. College of Opto-electronics Engineering, Changchun University of Science and Technology, Changchun 130022, China;2. College of Science, Changchun University of Science and Technology University, Changchun 130022, China;3. National Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
Abstract:The reflectivity spectra of 808 nm/980 nm double band mirror(DBM) are characterized in the paper.According to the structure of the DBM,the thermal model of Optically Pumped Vertical-External-Cavity Surface Emitting Semiconductor Lasers(OPS-VECSELs) with DBM is constructed and the distribution of thermal load in the VECSEL wafer is presented.The thermal characterization of OPS-VECSELs with DBM is analyzed in detail by finite element method.The results indicate that VECSEL wafer with DBM has better thermal properties and poorer thermal performance than with DBM when they have the same reflectivity(R=99.96%).So VECSEL wafer with DBM is more suitable for making high power semiconductor laser than with DBM.The theoretical analysis results will be provided as theory reference for VECSEL wafer structure optimization and experimental.
Keywords:optically pumped semiconductor laser  finite element method  double band mirror(DBM)  thermal effect
本文献已被 CNKI 等数据库收录!
点击此处可从《发光学报》浏览原始摘要信息
点击此处可从《发光学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号