| AgO_x界面插入层对GZO电极LED器件性能的影响 |
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| 引用本文： | 顾文,石继锋,李喜峰,张建华. AgO_x界面插入层对GZO电极LED器件性能的影响[J]. 发光学报, 2012, 33(10): 1127-1131 |
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| 作者姓名： | 顾文 石继锋 李喜峰 张建华 |
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| 作者单位： | 上海大学机电工程与自动化学院;上海大学新型显示技术及应用集成教育部重点实验室 |
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| 基金项目： | 国家自然科学基金(51072111);973计划(2011CB013100)资助项目 |
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| 摘 要： | 采用磁控溅射的方法在p-GaN上制备了GZO透明导电薄膜,通过在p-GaN和GZO界面之间插入AgOx薄层来改善LED器件的接触性能。研究结果表明:氮气退火后,采用界面插入层的AgOx/GZO薄膜电阻率为5.8×10-4Ω.cm,在可见光的透过率超过80%。AgOx界面插入层有效地降低了GZO与p-GaN之间的接触势垒,表现出良好的欧姆接触特性,同时使LED器件的光电性能获得了显著的提高。在50 mA的注入电流下,相比于常规的GZO电极LED器件,AgOx/GZO电极LED器件的正向电压由9.68 V降至6.92 V,而发光强度提高了13.5%。
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| 关 键 词： | LED 界面插入层 GZO电极 欧姆接触 |
| 收稿时间： | 2012-07-11 |
Effect of AgO_x Interface Insertion Layer on The Performance of LEDs with Ga-doped ZnO Electrode |
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| GU Wen,SHI Ji-feng,LI Xi-feng,ZHANG Jian-hua. Effect of AgO_x Interface Insertion Layer on The Performance of LEDs with Ga-doped ZnO Electrode[J]. Chinese Journal of Luminescence, 2012, 33(10): 1127-1131 |
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| Authors: | GU Wen SHI Ji-feng LI Xi-feng ZHANG Jian-hua |
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| Affiliation: | 1,2(1.School of Mechatronics Engineering and Automation,Shanghai University,Shanghai 200072,China; 2.Key Laboratory of Advanced Display and System Applications of Ministry of Education,Shanghai University,Shanghai 200072,China) |
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| Abstract: | GZO transparent conductive layers were deposited on p-GaN surface by magnetron sputtering.AgOx thin films were inserted between p-GaN and GZO to improve the performance of LED devices.The AgOx/GZO thin film exhibited low resistivity(5.8×10-4 Ω·cm) and high transmittance(above 80% in visible range) after nitrogen annealing.The AgOx interface insertion layer could effectively reduce the contact barrier,leading to good Ohmic contact characteristics of GZO/p-GaN and improved photoelectric performance of LEDs.With 50 mA injection current,the forward voltage reduced from 9.68 V to 6.92 V and the luminous intensity increased by 13.5% compared with conventional GZO electrode LEDs. |
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| Keywords: | LED insertion layer GZO electrode Ohmic contact |
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