标准CMOS工艺载流子注入型三端Si-LED的设计与研制

采用无锡华润上华(CSMC) 0.5 μm 标准CMOS工艺,设计并制备了一种新型的高发光功率载流子注入型三端Si-LED器件。该器件在p型衬底上进行n⁺掺杂,与p衬底形成两个相对的n⁺p结,其中一个结正向偏置,发出峰值波长在1 100 nm附近的红外光;另一个结同样正偏,作为注入结对发光进行调制。测试结果显示:第三端注入载流子明显增强了总体的发光功率,在10 mA偏置电流、3 V调制电压下,可获得1 nW的光功率,与单结相比提高了两个数量级。由于工作电压低,该器件可与目前主流的CMOS工艺共电源单芯片集成,在光电集成领域具有一定的应用前景。

Design and Fabrication of Three-terminal Carrier-injection-type Si-LED with Standard CMOS Technology

This paper demonstrates a novel carrier-injection-type silicon based light emitting device(LED) with three terminals and high light emission intensity.The device was designed and fabricated in the commercial standard 0.5 μm CMOS process offered by Central Semiconductor Manufacturing Corporation(CSMC) without any modification.Two shallow diagonal n+p junctions were embedded on the p type substrate.One junction biased in forward mode emits infrared light,and the other is also forward biased to inject carriers into the light emitting region.Experiment results show that,at 10 mA biased current and 3 V modulation voltage,1 nW optical power can be obtained and it’s approximately two orders of magnitude higher than the single junction.Due to the low operating voltage,the device can be monolithic integrated with the current mainstream silicon CMOS technology and shows a great potential in optoelectronic integration field.