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| 掺Te 的GaSb薄膜分子束外延生长及缺陷特性 | |
| 引用本文： | 陈 燕,邓爱红,汤宝,王国伟,徐应强,牛智川.掺Te 的GaSb薄膜分子束外延生长及缺陷特性[J].红外与毫米波学报,2012,31(4):298-301. |
| 作者姓名： | 陈 燕 邓爱红 汤宝 王国伟 徐应强 牛智川 |
| 作者单位： | 1. 四川大学物理科学与技术学院物理系,四川成都610065;绵阳师范学院物理系,四川绵阳621000 2. 四川大学物理科学与技术学院物理系,四川成都,610065 3. 中国科学院半导体研究所超晶格国家重点实验室,北京,100083 |
| 基金项目： | 自然科学基金项目：Y112071000；科技部973项目课题：2010CB327601 |
| 摘 要： | 分析了非掺GaSb材料及在GaAs衬底上用分子束外延生长掺杂Te的GaSb薄膜材料的缺陷特性,主要应用正电子湮没多谱勒展宽谱方法,并结合原子力显微镜和X射线衍射测试进行.多谱勒展宽谱研究表明,采用分子束外延法生长的掺杂Te的n型半导体GaSb薄膜材料的S参数比体材料小,所得缺陷主要是单空位与间隙原子,而几乎无复合体的缺陷类型. |
| 关 键 词： | 原子力显微镜 正电子湮没 X射线衍射 |
| 收稿时间： | 6/6/2011 1:36:04 AM |
| 修稿时间： | 2012/2/29 0:00:00 |
Defect of Te-doped GaSb layers grown by molecular beam epitaxy |
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| CHEN Yan,DENG Ai-Hong,TANG Bao,WANG Guo-Wei,XU Ying-Qiang and NIU Zhi-Chuan.Defect of Te-doped GaSb layers grown by molecular beam epitaxy[J].Journal of Infrared and Millimeter Waves,2012,31(4):298-301. | |
| Authors: | CHEN Yan DENG Ai-Hong TANG Bao WANG Guo-Wei XU Ying-Qiang and NIU Zhi-Chuan |
| Institution: | College of Physical Science and Technology, Sichuan University,College of Physical Science and Technolog,Sichuan University,State Key lab for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,State Key lab for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,State Key lab for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences and State Key lab for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences |
| Abstract: | In this paper we present the results of positron annihilation doppler broadening spectroscopy (PADB), X-ray diffraction spectra (XRD), and atomic force microscopy (AFM) measurements on the undoped GaSb and Te-doped GaSb films grown on GaAs substrate by molecular beam epitaxy(MBE). Research shows that the S parameter is smaller in GaSb film than the bulk material. The defects in the Te-doped N-type semiconductor GaSb obtained by MBE are mainly vacancies and impurity atoms instead of complex defects. |
| Keywords: | atomic force microscopy(AFM) positron annihilation X-ray diffraction |
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