Activation energy and hall-coefficient measurements in lightly dopedn-InP in the thermal freeze-out region

Summary The direct-current resistivity, β, and Hall coefficient,R _H, of lightly dopedn-type InP samples were measured at temperatures (T) down to 12K and magnetic fields up to 4.8 kG. A sharp exponential increase in β, asT was decreased, was observed for temperatures below 80 K. The Hall coefficient showed a similar trend,i.e. R _H increased sharply asT was reduced below 80 K. This is attributed to the freeze-out of conduction electrons onto their donor sites. The donor activation energy,E _d, calculated from the temperature dependence of the resistivity, was less than the theoretical prediction. An enhanced dielectric constant would be a possible candidate for such behaviour. The initial decrease in β (asT is reduced) recorded in the higher-temperature region is due to impurity scattering probably combined with lattice scattering. The authors of this paper have agreed to not receive the proofs for correction.