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Coherent scattering in a small quantum dot |
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| Authors: | V A Tkachenko O A Tkachenko Z D Kvon D G Baksheev A L Aseev J C Portal |
| Institution: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia;(2) Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia;(3) Grenoble High Magnetic Fields Laboratory, MPI-FKF and CNRS, B.P. 166, F-38042 Grenoble, France |
| Abstract: | Ballistic transport in an open small (100 nm) three-terminal quantum dot has been analyzed. The dot is based on the high-mobility 2D electron gas of the AlGaAs/GaAs heterojunction. It has been shown that the gate oscillations of the resistance of such a dot arise due to the coherent scattering of electrons on its quasidiscrete levels and these oscillations are suppressed by a weak magnetic field. |
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