首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Wirelike dinuclear ruthenium complexes connected by bis(ethynyl)oligothiophene
Authors:Gao Li-Bin  Kan Jian  Fan Yang  Zhang Li-Yi  Liu Sheng-Hua  Chen Zhong-Ning
Institution:State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, The Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.
Abstract:Preparation and characterization of a series of rodlike binuclear ruthenium polyynediyl complexes capped with redox-active organometallic fragments (bph)(PPh3)2Ru]+ (bph=N-(benzoyl)-N'-(picolinylidene)-hydrazine) or (Phtpy)(PPh3)2Ru]2+ (Phtpy=4'-phenyl-2,2':6',2' '-terpyridine) have been carried out. The length of the molecular rods is extended by successive insertion of 2,5-thiophene or 1,4-phenylene spacers in the bridging ligands. Oxidation of thiophene-containing Ru2II,II complexes induces isolation of stable Ru2II,III or Ru2III,III species. Electrochemical and UV-vis-NIR spectral studies demonstrate that the polyynediyl bridges with 2,5-thiophene units are more favorable for metal-metal charge transfer compared with those containing the same number of 1,4-phenylene units. Successive increase of thiophene spacers in mixed-valence complexes {RuII}-CC(C4H2S)mCC-{RuIII} (m=1, 2, 3) induced a smooth transition from almost electronic delocalization (m=1) to localization (m=3). For binuclear ruthenium complexes with intramolecular electron transfer transmitted across nine Ru-C and C-C bonds, electronic conveying capability follows {Ru}-CC(CC)2CC-{Ru}>{Ru}-CC(C4H2S)CC-{Ru}>{Ru}-CC(C6H4)CC-{Ru}>{Ru}-CC(CH=CH)2CC-{Ru}. It is revealed that molecular wires capped with electron-rich (bph)(PPh3)2Ru endgroups are much more favorable for electronic communication than the corresponding electron-deficient (Phtpy)(PPh3)2Ru-containing counterparts. The intermetallic electronic communication is fine-tuned by modification of both the bridging spacers and the ancillary ligands.
Keywords:
本文献已被 PubMed 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号