Temperature accelerated dielectric breakdown of PECVD low-k carbon doped silicon dioxide dielectric thin films |
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Authors: | H Zhou FG Shi B Zhao J Yota |
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Institution: | (1) Department of Chemical Engineering & Materials Science, University of California, Irvine, CA 92697-2575, USA;(2) Skyworks Solutions, Inc. 5221 California Ave., Irvine, CA 92612, USA |
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Abstract: | The dielectric breakdown strength of carbon doped silicon dioxide thin films with thickness d from 32 nm to 153 nm is determined at 25 °C, 50 °C, 100 °C, 150 °C and 200 °C, using I–V measurements with metal-insulator-semiconductor (MIS) structures. It is found that the dielectric breakdown strength, EB, decreases with increasing temperature for a given film thickness. In addition, a film thickness dependence of breakdown is also observed, which is argued to show an inverse relation to thickness d in the form of EB∝(d-dc)-n. The exponential parameter n and critical thickness limit dc also exhibit temperature dependent behavior, suggesting a temperature accelerated electron trapping process. The activation energy for the temperature acceleration was shown to be thickness dependent, indicating a thickness dependent conduction mechanism. It is thereafter demonstrated that for relatively thick films (thickness >50 nm), the conduction mechanism is Schottky emission. For relatively thin films (thickness <50 nm), the Schottky conduction mechanism was obeyed at low field region while FN tunnelling was observed as a prevail one in the high field region. PACS 73.40.Qv |
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