| Abstract: | A model for current voltage characteristics of a thin film metal-ferroelectric-metalstructure is constructed by combining the electrostatics of a polarized ferroelectric filmwith the balanced flow of charge through its interfaces. Using a set of fittingparameters, good agreement with several sets of experimental data is obtained fordifferent system temperatures. The influence of model parameters on the current-voltagecharacteristic is discussed. Best fit values of some of these parameters correlate wellwith ab initio calculations in the literature, supporting the idea of low dielectricpermittivity of the interface transition layers in the ferroelectric. |
