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Fabrication and Characterization of Si Nanocrystals Synthesized by Electron Beam Evaporation of Si and SiO2 Mixture
Authors:LI Wei-Long  JIA Rui  LIU Ming  CHEN Chen  XIE Chang-Qing  ZHU Chen-Xin  LI Hao-Feng  ZHANG Pei-Wen  YE Tian-Chun
Affiliation:Key Laboratory of Nanofabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
Abstract:Silicon nanocrystals synthesized by electron beam (e-beam) evaporation of Si and SiO2 mixture are studied. Rutherford backscattering spectrometry of the as-deposited Si-rich silicon dioxide or oxide (SRO) thin film shows that after evaporation, the Si and SiO2 concentration is well kept, indicating that the e-beam evaporation is suitable for evaporating mixtures of Si and SiO2. The SRO thin films are annealed at different temperatures for two hours to synthesize silicon nanocrystals. For the sample annealed at 1050°C, silicon nanocrystals with different sizes and the mean diameter of 4.5nm are evidently observed by high resolution transmission electron microscopy (HRTEM). Then the Raman scattering and photoluminescence spectra arising from silicon nanocrystals are further confirmed the above results
Keywords:68.37.Lp  73.22.-f  78.66.-w  78.67.-n
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