| MOCVD方法在Ti/Si(111)模板上生长ZnO薄膜的研究 |
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| 引用本文： | 李冬梅,李璠,苏宏波,王立,戴江南,蒲勇,方文卿,江风益.MOCVD方法在Ti/Si(111)模板上生长ZnO薄膜的研究[J].人工晶体学报,2006,35(1):63-65,70. |
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| 作者姓名： | 李冬梅 李璠 苏宏波 王立 戴江南 蒲勇 方文卿 江风益 |
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| 作者单位： | 南昌大学教育部发光材料与器件工程研究中心,南昌,330047 |
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| 基金项目： | 国家科技攻关项目;电子信息产业发展基金 |
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| 摘 要： | 本文采用常压MOCVD方法在Ti/Si（111）模板上生长了氧化锌（ZnO）薄膜，使用二乙基锌为Zn源，去离子水为O源。Si衬底上的Ti薄层采用电子束蒸发台蒸发，然后低温生长缓冲层并在高温下进行重结晶，接着在680％进行ZnO薄膜的生长。采用粉末衍射法、双晶X射线衍射及光致发光技术研究了材料的取向、结晶性能及发光性能。结果表明，本文制备了高度择优取向和良好发光性能的ZnO薄膜。
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| 关 键 词： | 氧化锌 金属Ti Si衬底 金属有机化学气相沉积 |
| 文章编号： | 1000-985X（2006）01-0063-03 |
| 收稿时间： | 2005-07-25 |
| 修稿时间： | 2005-07-252005-09-25 |
MOCVD Growth of ZnO Thin Films on Ti/Si( 111 ) Templates |
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| LI Dong-mei,LI Fan,SU Hong-bo,WANG Li,DAI Jiang-nan,PU Yong,FANG Wen-qing,JIANG Feng-yi.MOCVD Growth of ZnO Thin Films on Ti/Si( 111 ) Templates[J].Journal of Synthetic Crystals,2006,35(1):63-65,70. |
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| Authors: | LI Dong-mei LI Fan SU Hong-bo WANG Li DAI Jiang-nan PU Yong FANG Wen-qing JIANG Feng-yi |
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| Institution: | Education Ministry Engineering Research Center for Luminescence Materials and Devices, Nanchan$ University, Nanchang 330047, China |
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| Abstract: | ZnO films were prepared by atmospheric-pressure MOCVD on Ti/Si(111)templates,with DEZn and deionized water as Zn precursors and O precursors,respectively. The Ti film on Si(111)was deposited by electron beam evaporation.The structural and optical properties were examined by single-crystal X-ray diffraction,double-crystal X-ray diffraction and photoluminescence.The XRD patterns indicate that as-grown ZnO films possess a hexagonal wurtzite structure with a highly-preferred orientation of(002).The photoluminescence was measured at room temperature,and the band-edge emission was observed without obvious deep-level peaks. |
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| Keywords: | zinc oxide titanium silicon substrate metal organic chemical vapor deposition |
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