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Applications of a silicon photodiode detector for radon progeny measurements |
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| Authors: | M. Voytchev D. Klein A. Chambaudet G. Georgiev M. Iovtchev |
| Affiliation: | a ISTE, Université de Franche-Comté, B.P. 71427, F-25211, Montbéliard Cedex, France b LMN, Université de Franche-Comté, La Bouloie, F-25030, Besançon Cedex, France c Institute for Nuclear Research, 72 Blvd. Tzarigr. chaussee, BG-1784, Sofia, Bulgaria d LMIT, Université de Franche-Comté, B.P. 71427, F-25211, Montbéliard, France |
| Abstract: | An application of our developed silicon photodiode detector for radon progeny measurements is presented in this paper. It was determined the deposition velocity for free (3.6 ± 0.7) × 10−3 m s−1 and attached (1.0 ± 0.5) × 10−5 m s−1 fraction of short living radon progeny. |
| Keywords: | Silicon photodiodes radon progeny deposition velocity |
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