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Soft X-ray emission study of thermally treated Ni(film)/4H–SiC(substrate) interface |
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| Authors: | A Ohi J Labis Y Morikawa T Fujiki M Hirai M Kusaka M Iwami |
| Institution: | Faculty of Science, Research Laboratory for Surface Science, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan |
| Abstract: | Deposition of Ni as contact on 4H–SiC has been investigated. Ni/4H–SiC samples were annealed at temperatures of 600, 800 and 950 °C for 30 min and were non-destructively characterized by soft X-ray emission spectroscopy (SXES) using synchrotron radiation as excitation. Si L2,3 SXE showed the formation of Ni2Si for all annealing temperatures. The C K SXE indicated the formation of graphite and graphitic carbons at annealing temperatures of 950 °C and below 800 °C, respectively. |
| Keywords: | Silicon carbide Interfacial reaction Soft X-ray emission Synchrotron radiation |
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