Auger spectroscopy and properties of Ir(Pt)/PZT(PZT/PT)/Ir nanosized thin-film structures |
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| Authors: | V P Afanas’ev P V Afanas’ev I V Grekhov L A Delimova S -P Kim J -M Koo D V Mashovets A V Pankrashkin Y Park A A Petrov S Shin |
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| Institution: | (1) St. Petersburg State Electrotechnical University “LéTI”, ul. Professora Popova 5, St. Petersburg, 197376, Russia;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St Petersburg, 194021, Russia;(3) Samsung Advanced Institute of Technology, Suwon, 440-600, Korea |
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| Abstract: | Studies of the elemental distribution profiles through the thickness of thin-film ferroelectric capacitor structures using Auger spectroscopy made it possible to establish the relation between the elemental and phase composition of the structures, on the one hand, and their electrophysical properties, on the other. Special features were observed in the behavior of the lead titanate underlayer both in the as-fabricated and aged structures. It is shown that the variation in the characteristics of the capacitor structures during aging is caused by diffusion of the elements at the interfaces and in the PZT film against a background of a significant increase in the oxygen concentration. As a result, interface-modifying oxide layers form and the trap density on the upper and lower interfaces decreases in all samples. |
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