Lifetime of nonequilibrium charge carriers in the base of p-n-junction semiconductor diode at arbitrary injection levels

In the approximation of exponential distribution of nonequilibrium charge carriers in the base of semiconductor p-n-junction diode a formula is obtained for lifetime calculation, which is valid at arbitrary injection levels. The lifetime is determined via measurements of only stationary characteristics of diodes (dc-CVC and low-frequency differential resistance). These characteristics, as well as the dependence of the barrier capacity on the reverse voltage, for determination of equilibrium concentration of carriers in the diode base, have been measured for D226B alloy diodes. The dependence of the lifetime of nonequilibrium carriers on the injection level, calculated from experimental data, agrees with the Shockley-Read theory of recombination; this agreement may be considered as a justification of assumptions made for lifetime calculation.