Physical Institute of the Technical University Budapest, Budafoki út 8., Budapest 1111, Hungary
a Physics Department of the State University of New York, 1400 Washington Ave., Albany, NY 12222, USA
Abstract:
The stability of hydrogen complexes aligned in a (1 1 1) plane of silicon is studied theoretically. Pairs of hydrogen atoms saturating broken bonds between adjacent planes are found to be the most stable arrangement with the heat of formation increasing as the platelet grows. The related stress is estimated and electronic effects are discussed.