| 用非平衡磁控溅射法制备CNx薄膜 |
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| 引用本文： | 高鹏,刘传胜,吴大维,彭友贵,范湘军. 用非平衡磁控溅射法制备CNx薄膜[J]. 武汉大学学报(理学版), 2001, 47(1): 99-102 |
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| 作者姓名： | 高鹏 刘传胜 吴大维 彭友贵 范湘军 |
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| 作者单位： | 武汉大学物理科学与技术学院,湖北 武汉 430072 |
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| 基金项目： | 国家自然科学基金资助项目(19875037) |
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| 摘 要： | 利用非平衡磁控溅射法，用一对石墨溅射靶，以N
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| 关 键 词： | β-C |
| 文章编号： | 0253-9888(2001)01-0099-04 |
| 修稿时间： | 2000-09-21 |
Preparation of CNx FilmsUsing Unbalanced Magnetron Sputtering Deposition |
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| GAO Peng,LIU Chuan-Sheng,WU Da-wei,PENG You-gui,FAN Xiang-Jun. Preparation of CNx FilmsUsing Unbalanced Magnetron Sputtering Deposition[J]. JOurnal of Wuhan University:Natural Science Edition, 2001, 47(1): 99-102 |
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| Authors: | GAO Peng LIU Chuan-Sheng WU Da-wei PENG You-gui FAN Xiang-Jun |
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| Abstract: | CNx films were deposited on Si(1 0 0) substrates by UMS(unbalanced magnetron sputtering) system, which utilized graphite as target material, nitrogen as reactive gas, and argon as sputtering gas. The ratios of N/C are 1.06，1.24. XPS and FTIR analysises show the existence of C—N single bond in the films,and XRD peaks mean that β-C3N4 existes in the thin films .On the whole, the UMS method is an effective way to prepare the C3N4 thin films. |
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| Keywords: | C_3N_4 unbalanced magnetron sputtering thin film |
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