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Effects of polarization on intersubband transitions of AIxGa1-xN/GaN multi-quantum wells |
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| Institution: | [1]Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China [2]Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China |
| Abstract: | |
| Keywords: | intersubband transition polarization electron subband levels AIGaN/GaN quantum well |
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