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High-voltage super-junction lateral double-diffused metal-oxide semiconductor with a partial lightly doped pillar |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China, Chengdu 610054, China |
| Abstract: | |
| Keywords: | super-junction lateral double-diffused metal-oxide semiconductor partial lightly doped pillar electric field modulation breakdown voltage |
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