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Influences of high-temperature annealing on atomic layer deposited Al2 O3/4H-SiC |
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| Authors: | Wang Yi-Yu Shen Hua-Jun Bai Yun Tang Yi-Dan Liu Ke-An Li Cheng-Zhan Liu Xin-Yu |
| Affiliation: | [1]Department of Microwave Devices and Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China [2]Zhuzhou CSR Times Electric Co. Ltd., Zhuzhou 412001, China |
| Abstract: | |
| Keywords: | Al2O3 SiC high-temperature annealing crystallize |
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