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Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode
Authors:Wu De-Ql  BaiYang  JiaRui Jin Zhi  Liu Xin-Yu  Lin Mei-Yu
Affiliation:a) Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China b) China Academy of Telecommunication Research of Ministry of Industry and Information Technology of the People's Republic of China (MIIT), Beijing 100191, China
Abstract:InP etching, InP Gunn device, ICE wet chemical etching
Keywords:InP etching   InP Gunn device   ICE wet chemical etching
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