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Fabrication and characterization of V-gate AIGaN/GaN high-electron-mobility transistors |
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| Authors: | Zhang Kai Cao Meng-Yi Chen Yong-He Yang Li-Yuan Wang Chong Ma Xiao-Hua and Hao Yue |
| Institution: | 1 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇ an 710071, China 2 School of Technical Physics, Xidian University, Xi ＇ an 710071, China) |
| Abstract: | |
| Keywords: | high-electron-mobility transistors electric-field distribution field plate current dispersion |
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