Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation |
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| Institution: | [1]School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China [2]State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China [3]State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China |
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| Abstract: | Aluminum-oxide films deposited as gate dielectrics on germanium(Ge) by atomic layer deposition were post oxidized in an ozone atmosphere.No additional interfacial layer was detected by the high-resolution cross-sectional transmission electron microscopy and X-ray photoelectron spectroscopy measurements made after the ozone post oxidation(OPO) treatment.Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/GeMOS capacitors were confirmed.Furthermore,a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time.The results can be attributed to the film quality having been improved by the OPO treatment. |
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| Keywords: | AlO gate dielectric ozone post oxidation equivalent oxide thickness electrical properties |
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