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Deep UV laser induced luminescence in oxide thin films |
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| Authors: | J Heber C Mühlig W Triebel N Danz R Thielsch N Kaiser |
| Institution: | Fraunhofer Institut für Angewandte Optik und Feinmechanik, Schillerstrasse 1, 07745 Jena,
Germany, DE Institut für Physikalische Hochtechnologie e.V. Jena, Winzerlaer Strasse 10, 07745 Jena, Germany, DE Southwall Europe GmbH, Southwallstrasse 1, 01900 Grossr?hrsdorf, Germany, DE |
| Abstract: | Time-resolved luminescence experiments have been set up in order to study the interaction of 193-nm laser radiation with dielectric thin films. At room temperature, Al2O3 coatings show photoluminescence upon ArF excimer laser irradiation, with significant intensity contributions besides the known substrate emission. Time- and energy-resolved measurements indicate the presence of oxygen-defect centers in Al2O3 coatings, which suggests a strong single-photon interaction at 193 nm by F+ and F center absorption. Measurements on highly reflective thin-film stacks, consisting of quarter-wave Al2O3 and SiO2 layers, indicate similar UV excitations, mainly from color centers of Al2O3. Received: 20 February 2002 / Accepted: 11 April 2002 / Published online: 5 July 2002 |
| Keywords: | PACS: 78 55 -m 78 20 -e 77 55 +f |
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