MeV Au ion induced modifications at Co/Si interface |
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Authors: | J Ghatak D Kabiraj |
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Institution: | a Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India b Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India |
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Abstract: | We report on room temperature MeV Au ion induced modifications at the Co/Si interfaces. Nanometers size thin film of Co and Si were grown by ultra high vacuum (UHV) electron beam evaporation technique on Si(1 1 1) surface and were irradiated by 1.5 MeV Au2+ ions at a fluence of 5 × 1014 ions cm−2. High-resolution transmission electron microscopy (HRTEM) along with energy filter imaging technique has been employed to study the formation of Co-Si alloy at the interface. Formation of such surface alloy has been discussed in the light of ion-matter interaction in nanometer scale regime. |
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Keywords: | 81 07 Bc 64 75 +g 61 80 Jh 61 82 Bg 68 37 Lp |
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