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Self-limiting growth of ZnO films on (0 0 0 1) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide |
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| Authors: | Yen-Ting Lin Hung-Wei Lai Dong-Yuan Lyu Tai-Yuan Lin Jyh-Rong Gong |
| Affiliation: | a Institute of Nanoscience, National Chung Hsing University, Taichung 402, Taiwan, ROC b Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC c Department of Physics, National Chung Hsing University, Taichung 402, Taiwan, ROC d Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 202, Taiwan, ROC |
| Abstract: | Atomic layer deposition (ALD) of zinc oxide (ZnO) films on (0 0 0 1) sapphire substrates was conducted at low temperatures by using diethyl-zinc (DEZn) and nitrous oxide (N2O) as precursors. It was found that a monolayer-by-monolayer growth regime occurred at 300 °C in a range of DEZn flow rates from 5.7 to 8.7 μmol/min. Furthermore, the temperature self-limiting process window for the ALD-grown ZnO films was also observed ranging from 290 to 310 °C. A deposition mechanism is proposed to explain how saturated growth of ZnO is achieved by using DEZn and N2O. Transmission spectroscopic studies of the ZnO films prepared in the self-limiting regime show that the transmittances of ZnO films are as high as 80% in visible and near infrared spectra. Experimental results indicate that ZnO films with high optical quality can be achieved by ALD at low temperatures using DEZn and N2O precursors. |
| Keywords: | ZnO Atomic layer deposition Absorption spectroscopy |
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