Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures |
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Authors: | M Razeghi S Abdollahi Pour E K Huang G Chen A Haddadi B M Nguyen |
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Institution: | (1) Naval Research Laboratory, Washington, DC, 20375, United States;(2) SFA Inc, Crofton, MD, 21114, United States; |
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Abstract: | Recent efforts to improve the performance of type II InAs/GaSb superlattice photodiodes and focal plane arrays (FPA) have
been reviewed. The theoretical bandstructure models have been discussed first. A review of recent developments in growth and
characterization techniques is given. The efforts to improve the performance of MWIR photodiodes and focal plane arrays (FPAs)
have been reviewed and the latest results have been reported. It is shown that these improvements has resulted in background
limited performance (BLIP) of single element photodiodes up to 180 K. FPA shows a constant noise equivalent temperature difference
(NEDT) of 11 mK up to 120 K and it shows human body imaging up to 170 K. |
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