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Pressure dependence of elastic constants in zinc-blende GaN and InN and their influence on the pressure coefficients of the light emission in cubic InGaN/GaN quantum wells
Authors:SP ?epkowski  JA Majewski
Institution:a Laboratory of Semiconductors, Unipress, High Pressure Research Center, Polish Academy of Sciences, ul. Soko?owska 29, 01142 Warsaw, Poland
b Walter Schottky Institute, Technische Universität München, Garching, Germany
Abstract:We have studied the influence of nonlinear elastic effects on the pressure coefficients of light emission, dEE/dP, in cubic InGaN/GaN quantum wells. By means of ab-initio calculations, we have determined the pressure dependences of the elastic constants, C11, C12 and C44 in zinc-blende InN and GaN. Further, we show that the pressure dependence of the elastic constants results in significant reduction of dEE/dP in cubic InGaN/GaN quantum wells and essentially improves the agreement between experimental and theoretical values.
Keywords:73  20  Dx  62  20  Dc  62  50  +p
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