Pressure dependence of elastic constants in zinc-blende GaN and InN and their influence on the pressure coefficients of the light emission in cubic InGaN/GaN quantum wells |
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Authors: | SP ?epkowski JA Majewski |
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Institution: | a Laboratory of Semiconductors, Unipress, High Pressure Research Center, Polish Academy of Sciences, ul. Soko?owska 29, 01142 Warsaw, Poland b Walter Schottky Institute, Technische Universität München, Garching, Germany |
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Abstract: | We have studied the influence of nonlinear elastic effects on the pressure coefficients of light emission, dEE/dP, in cubic InGaN/GaN quantum wells. By means of ab-initio calculations, we have determined the pressure dependences of the elastic constants, C11, C12 and C44 in zinc-blende InN and GaN. Further, we show that the pressure dependence of the elastic constants results in significant reduction of dEE/dP in cubic InGaN/GaN quantum wells and essentially improves the agreement between experimental and theoretical values. |
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Keywords: | 73 20 Dx 62 20 Dc 62 50 +p |
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