Etched facet and semiconductor/air DBR facet of a AlGaInP laser diode prepared by focused ion beam milling |
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| Authors: | Qian Ren Jun Xu YanBo Jin DaPeng Yu |
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| Affiliation: | a Semiconductors and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Research Center for Wide Band-Gap, Peking University, Beijing 100871, People's Republic of China
b Electron Microscopy Laboratory, Peking University, Beijing 100871, People's Republic of China |
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| Abstract: | The study of focused ion beam (FIB) milling for making etched facet and semiconductor/air distributed Bragg reflector (DBR) facets of AlGaInP-based red laser diodes (LD) is presented in this letter. For the Ga ion beam current of 100 pA at fixed accelerated voltage 30 kV, FIB milling rate of GaAs was found to be 0.46 μm3/nC. As a trade-off between high reflectivity and enough technical tolerance, the combination of third Bragg orders of semiconductor wall and air gap was chosen. The deeply etched mirror and distributed Bragg reflector facet consisting of pairs of semiconductor wall/air gap on laser diodes (LD) cavity facets with vertical sidewall on AlGaInP LDs were fabricated by focused Ga ion beam milling. Comparison of the AlGaInP LD with the mirrors between cleaved and FIB made facet was given and discussed. |
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| Keywords: | 42.55Px 42.79Dj 41.75Ak 42.79Bh |
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