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Acoustically induced potential dots in GaAs quantum wells
Authors:F. Alsina
Affiliation:Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
Abstract:Dynamic dots (DDs) consisting of confined and mobile potentials are realized by the interference of orthogonal surface acoustic wave (SAW) beams in GaAs quantum wells. Photoluminescence spectroscopy reveals that the DDs are characterized by a peculiar distribution of strain and piezoelectric fields dictated by the lattice symmetry, which is quite different from the one induced by a single SAW. We demonstrate the unique ability of DDs to control the flow of photogenerated electron-hole pairs and of photons by realizing an electronic switch based on SAWs.
Keywords:73.50.Rb   77.65.Dq   77.65.Ly   78.55.Cr
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