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Synthesis and magnetic properties of Zn1−xMnxO films prepared by the sol-gel method |
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| Authors: | YM Kim I-W Park YJ Park |
| Institution: | a Seoul Branch, Korea Basic Science Institute, 126-16 Anam-dong, Sungbuk-gu, Seoul 136-701, South Korea b Nano Device Research Center, KIST, P.O. Box 131, Cheongryang, Seoul 130-650, South Korea c School of Natural Science, Korea University, Chungnam 339-800, South Korea |
| Abstract: | We report on the ferromagnetic characteristics of Zn1−xMnxO films (x=0.1-0.3) prepared by the sol-gel method on silicon substrates using transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), X-ray diffractometry (XRD) and superconducting quantum interference device (SQUID) magnetometry at various temperatures. Magnetic measurement show that the Curie temperature (TC) and the coercive field (HC) were ∼39 K and ∼2100 Oe for the film of x=0.2, respectively. EDS and TEM measurements indicate that Mn content at the interface is significantly higher than that at the center of the Zn0.8Mn0.2O film showing the ratio, Zn:Mn:O≅1:12:15. This experimental evidence suggests that ferromagnetic precipitates containing manganese oxide may be responsible for the observed ferromagnetic behavior of the film. |
| Keywords: | 75 50 Pp 75 70 &minus I 75 50 Cc |
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