Growth of textured nonstoichiometric MoTe2 films from Mo/Te layers and their use as precursor in the synthesis of MoTe2−xSx films

Molybdenum ditelluride, MoTe₂, thin films have been prepared on a glass substrate by depositing first a layer of Mo of 1 μm thickness by rf sputtering and then layers of tellurium of 4 μm thickness followed by annealing, in a vacuum sealed Pyrex tube, at 823 K for one hour. The films have been studied by X-ray diffraction, electron microprobe analysis, scanning electron microscopy and for optical and electrical properties. This indicated that the films so prepared are well crystallized and textured with a hexagonal structure similar to 2H-MoS₂. However, the film is non stoichiometric due to the presence of small amounts of oxygen. The optical properties are in good agreement with those of single crystals and film deposited by other means. The room temperature conductivity is of the same order of magnitude as that of single crystals. Finally, MoTe₂ has been used as a precursor for the growth of MoTe_2−xS_x films.