Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructure |
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| Authors: | ZJ Qiu YS Gui N Tang B Shen JH Chu |
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| Institution: | a National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 YuTian Rd., Shanghai 200083, China
b National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China |
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| Abstract: | Magneto-transport measurements have been carried out on a modulation-doped Al0.22Ga0.78N/GaN heterostructure in a temperature range between 1.5 and 25 K with a rather high carrier density, 1.1×1013 cm−2. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a special temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband. |
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| Keywords: | 72 20 My 73 40 Kp |
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