Structural investigations of GeS2-Ga2S3-CdS chalcogenide glasses using Raman spectroscopy

Raman investigations were carried out for various compositions of chalcogenide glasses in the GeS₂-Ga₂S₃-CdS system. Addition of Ga₂S₃ into GeS₂ results in the formation of metal-metal bonds and edge-shared GaS_4/2 tetrahedra. Ge²⁺ ions may surround GaS_4/2]¹⁻ tetrahedra acting as charge compensators. Upon the addition of CdS into the GeS₂-Ga₂S₃ system, the number of the metal-metal bonds and edge-shared GaS_4/2 tetrahedra decreases, resulting in the formation of corner-shared tetrahedra with non-bridging sulfurs (NBS). Cd²⁺ ions can be dissolved into the glass network as charge compensators for these NBS and exited few GaS_4/2]¹⁻ tetrahedra. The high solubility of CdS is ascribed to the dissociation of metal-metal bonds and edge-shared tetrahedra in these Ga-containing glasses.