|
|||||
|
|
Patterned uniformly orientated silicon nanocrystallite films and efficient field emission characteristics |
|
| Authors: | Ke Yu Ziqiang Zhu Qiong Li Wei Lu |
| Institution: | a Department of Electric Engineering, East China Normal University, Shanghai 200062, People's Republic of China b Analytical Center, East China Normal University, Shanghai 200062, People's Republic of China c State Key Laboratory for Infrared Physics, Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China d School of Physics and Microelectronics, Shandong University, Jinan 250061, People's Republic of China e National Key Laboratory for Applied Surface Physics, Fudan University, Shanghai 200433, People's Republic of China |
| Abstract: | Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm2 was obtained. The emission current density from the SiNC films reached 1 mA/cm2 under a bias field of about 11 V/μm. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays. |
| Keywords: | 81 07 Bc 85 45 Db 82 33 Xj |
| 本文献已被 ScienceDirect 等数据库收录！ | |