Electroluminescence of diamond films induced by a scanning tunneling microscope |
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Authors: | Z-C Dong AS Trifonov NV Suetin PV Minakov |
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Institution: | a Nanomaterials Laboratory, National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan b Moscow State University, Institute of Nuclear Physics, Moscow 119882, Russia |
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Abstract: | We report the scanning tunneling microscope induced band-A emission from boron-doped polycrystalline diamond films fabricated by chemical-vapor deposition (CVD). The broad blue emission occurs at a bias above ±3.4 V with double peaks at 410 and 450 nm and is attributed to the dislocation-related defect centers. Greatly enhanced green emissions around 530 nm are observed at high positive bias. This, together with strongly bias- and polarity-dependent emission intensities and spectra, leads us to propose that the boost in the green emission at high bias is probably related to the minority electron injection into the boron-related acceptor states in the subsurface. |
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Keywords: | Electroluminescence Field emission Scanning tunneling microscopy Scanning tunneling spectroscopies Diamond Polycrystalline thin films |
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