Suppression of silicon (001) surface reactivity using a valence-mending technique |
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Authors: | Meng Tao Janadass Shanmugam Michael Coviello Wiley P Kirk |
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Institution: | Department of Electrical Engineering and NanoFAB Center, University of Texas at Arlington, P.O Box 19072, Arlington, TX 76019, USA |
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Abstract: | It is experimentally shown that, by terminating dangling bonds on Si(001) with a monatomic layer of selenium, the chemical reactivity of the surface is suppressed. In the case of nickel silicidation, transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy reveal that Se passivation suppresses Ni silicidation by over 100 °C as compared to the bare Si(001) surface. The formation of Ni subsilicide (Ni2Si) is not observed on Se-passivated Si(001). This interfacial silicidation appears to be linked with changes in electrical behavior of the interface between titanium and Se-passivated Si(001), which we reported previously. |
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Keywords: | 68 35 Fx 81 60 Cp 82 65 Yh |
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